2 Sep Gate leakage current. IGSS. VGS = ±25 V, VDS = 0 V. —. —. ± µA. Gate− source breakdown voltage. V (BR) GSS. IG = ±10 µA, VDS = 0 V. 28 Jan K Datasheet PDF – N Channel MOSFET – Toshiba, 2SK datasheet, K pdf, K pinout, K equivalent, data, circuit, output. 28 Jan Part Number: K Function: TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) Maker: Toshiba Pinouts.
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On an N-channel MOSFET, if you charge the gate positive, you should get conduction from drain to source – k2996 the gate charge leaks away while k2996 making the test, I’d treat the device as suspect.
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